Rchr
J-GLOBAL ID:200901058131816142
Update date: May. 17, 2020
Ouchi Shinichi
オオウチ シンイチ | Ouchi Shinichi
Affiliation and department:
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1):
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=S55563215
MISC (4):
YX Liu, E Sugimata, K Ishii, M Masahara, K Endo, T Matsukawa, H Yamauchi, S O'uchi, E Suzuki. Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 4B. 3084-3087
M Masahara, YX Liu, K Endo, T Matsukawa, K Sakamoto, K Ishii, S O'uchi, E Sugimata, H Yamauchi, E Suzuki. Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain. APPLIED PHYSICS LETTERS. 2006. 88. 7. 0721031-0721033
Demonstration and analysis of accumulation-modeDG=MOSFET. JJAP. 2006
Investigation of Accumulation-mode Vertical DG-MOSFET. Extended Abstract of SSDM 2005. 2005. 586-587
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