Research field (3):
Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (8):
ヘテロ構造
, 新機能材料
, エピタキシャル成長
, 半導体
, Heterostructure
, New functional materials
, Epitaxy
, Semiconductor
Research theme for competitive and other funds (7):
2012 - 2015 Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.
2009 - 2011 High growth-rate hydride-vapor-phase of aluminum nitride
2006 - 2010 RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure
2006 - 2008 Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
2007 - InN関連混晶半導体のバンドギャップエネルギーに関する研究
2007 - Bandgap energy of InN-related alloy semiconductors
2005 - 2006 熱処理によるInN系半導体の高品質化に関する研究
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Papers (36):
Hiroyuki Naoi, Shion Iwai, Rinko Ohara. Bandgap energies of cubic AlxIn1-xNySb1-y calculated by means of the dielectric method. MRS Advances. 2022. 7. 25-26. 528-532
Toshiyuki Yamaguchi, Hiroya Ogawa, Mitsuki Nakashima, Hiroyuki Naoi, Hideaki Araki, Kazuo Jimbo, Hironori Katagiri, Junji Sasano, Masanobu Izaki. Fabrication of Cu2ZnSn(S, Se)4 thin-film solar cells by sulfurization using Cu2ZnSnSe4, NaF and KF compounds. Japanese Journal of Applied Physics. 2020. 59. SG. SGGF11-1-SGGF11-6
Toshiyuki Yamaguchi, Mitsuki Nakashima, Kazuki Uenishi, Hiroyuki Naoi, Hideaki Araki, Hironori Katagiri, Junji Sasano, Masanobu Izaki. Fabrication of Cu2ZnSn(S,Se)4 thin-film solar cells by sulfurization using Cu2ZnSnSe4 and KF compounds. Japanese Journal of Applied Physics. 2019. 58. SBBF03-1-SBBF03-5
Hiroyuki Naoi, Takeyuki Matsumoto. Bandgap Energies of Cubic AlxGa1-xNyAs1-y Calculated by Means of the Dielectric Method. MRS Advances. 2016. 1. 2. 175-180
D. Muto, H. Naoi, S. Takado, T. Araki, Y. Nanishi. Study on growth of Mg-doped N-polar InN by RF-MBE and its electrical properties. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. 2007. 169-170
Cu2ZnSn(S,Se)4 thin-film solar cells prepared by sulfurization using Cu2ZnSnSe4, NaF and KF compounds
(2019 International Conference on Solid State Devices and Materials)
- 2001 The University of Tokushima Graduate School, Division of Engineering Materials Science and Engineering
- 1995 The University of Tokushima
- 1995 The University of Tokushima Graduate School, Division of Engineering Electrical and Electronic Engineering
- 1993 The University of Tokushima Faculty of Engineering Department of Electrical and Electronic Engineering
- 1993 The University of Tokushima Faculty of Engineering Electrical and Electronic Engineering
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Professional career (1):
Doctor of Engineering (The University of Tokushima)
Association Membership(s) (7):
Materials Research Society
, 電子情報通信学会
, 応用物理学会
, Materials Research Society
, Information and Communication Engineers
, The Institute of Electronics
, The Japan Society of Applied Physics