Takehiro Haneda, Kosei Yanachi, Hiroki Ishizaki, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Toshiyuki Takamatsu, Yukio Fukuda. In situ formation of aluminum germanate interlayer for high-k/Ge metal-oxide-semiconductor structure by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen. Proceedings of the twelfth International Symposium on Sputtering and Plasma Processes (ISSP 2013). 2013. 402-405
Hiroshi Okamoto, Daichi Yamada, Hidefumi Narita, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Yukio Fukuda. Effect of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition. Extended abstract of 9th International Workshop on New group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration". 2016. I-04-7-I-04-8
Electrical Properties of Al2O3 Thin Films Deposited on p-type Ge Substrates
(The 70th JSAP Spring Meeting 2023 2023)
Investigation of high-k/Ge interface affected by fabrication processes
(2023)
I-V Characteristics of Amorphous Carbon Thin Films Deposited on p-type Ge Substrates at Low Temperatures
(2022)
Investigation of electrical properties of high-k/Ge interface affected by fabrication processes
(Center for Nation-Wide Cooperative Research on ICT FY 2021 RIEC Annual Meeting on Cooperative Research Projects 2022)
Fabrication and Characterization of Ge-based MIS structures
(240th Meeting of the Electrochemical Society (240th ECS Meeting) 2021)