Sunami Hideo

スナミヒデオ | Sunami Hideo

Affiliation and department：
Job title： Professor
Homepage URL (1)： http://www.rcis.hiroshima-u.ac.jp/sunami/
MISC (175)：

T. Yoshino, S. Yokoyama, T. Suzuki, T. Fujii, K. Shibahara, A. Nakajima, T. Kikkawa, H. SunaInfluence of Organic Contamination on Reliability and Trap Generation in MOSmi, and Q.D.M. Khosru. Ext. Abs.the Int. Conf. on Solid State Devices and Materials. 2001. 176-177
T. Yoshino, S. Yokoyama, T. Suzuki, T. Fujii, K. Shibahara, A. Nakajima, T. Kikkawa, H. SunaInfluence of Organic Contamination on Reliability and Trap Generation in MOSmi, and Q.D.M. Khosru. Ext. Abs.the Int. Conf. on Solid State Devices and Materials. 2001. 176-177
次世代ULSIプロセス技術、第1章および第2章. リアライズ社. 2000. 3-57
NAKAJIMA A, YOSHIMOTO T, KIDERA T, OBATA K, YOKOYAMA S, SUNAMI H, HIROSE M. Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectriocs for highly reliable p-metal-oxide-semiconductor field-effect transistors. Appl. Phys. Lett. 2000. 77. 18. 2855-2857
NAKAJIMA A, YOSHIMOTO T, KIDERA T, OBATA K, YOKOYAMA S, SUNAMI H, HIROSE M. Characterization of atomic-layer-deposited silicon nitride/SiO2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors. J. Vac. Sci. Tech. B. 2000. 19. 4. 1138-1143

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Patents (98)：

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Awards (6)：

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