Rchr
J-GLOBAL ID：200901091245675368
Update date: Aug. 29, 2020
Muto Shunichi
ムトウ シュンイチ | Muto Shunichi
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Affiliation and department：
Hokkaido University Faculty of Engineering Division of Applied Physics
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Detailed information
Research field (2)：
Crystal engineering
, Applied materials
Research theme for competitive and other funds (2)：
半導体微細構造の作製と物性の研究
Study on Fabrication and Physics of Semiconductor Microstructure
MISC (32)：
H Sasakura, S Muto, T Ohshima. Quantum gates using spin states of triple quantum dot. PHYSICA E. 2001. 10. 1-3. 458-462
Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100). J. Appl. Phys. 2001. 89. 1. 160-164
Numerical simulation of electron diffraction through a narrow constriction(共著). J. Appl. Phys. 1999. 86. 11. 6249-6255
Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells(共著). Jpn. J. Appl. Phys. 1999. 38. 8. 4680-4681
Exchange Interaction of Optically Created Electrons of Coupled Quantum Dots「(共著)」. Jpn.J.Appl.Phys. 1999. 38. 8B. L917-L919
ｍore...
Professional career (2)：
(BLANK)
(BLANK)
Awards (1)：
1993 - 電子情報通信学会賞(論文賞)
Association Membership(s) (3)：
電子情報通信学会
, 日本物理学会
, 応用物理学会
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