Art
J-GLOBAL ID:200902000000980406   Reference number:92A0656048

Low threshold InGaAs strained quantum well laser with lateral npn current blocking structure grown by molecular beam epitaxy.

分子線エピタクシー成長横方向npn電流阻止構造をもつ低しきい値InGaAsひずみ量子井戸レーザ
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Material:
Volume: 28  Issue: 15  Page: 1419-1420  Publication year: Jul. 16, 1992 
JST Material Number: A0887A  ISSN: 0013-5194  CODEN: ELLEAK  Document type: Article
Article type: 短報  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

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Semiconductor lasers 

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