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ArticleJ-GLOBAL ID:200902000011820907整理番号:84A0256837

High concentration Sb diffusion into silicon using auxiliary wafers and optimum conditions.

補助ウエハを用いたシリコンへの高濃度Sb拡散と最適条件

著者:NANBA M(Hitachi Ltd., Tokyo)、KOZUKA H(Hitachi Ltd., Tokyo)、NAKAMURA S(Hitachi Ltd., Tokyo)
資料名:J Electrochem Soc 巻:131 号:1 ページ:190-196
発行年:1984年01月
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About J-GLOBAL

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