Art
J-GLOBAL ID：200902000014187067   Reference number：85A0109229

Hydrogen-related deep levels in proton-bombarded silicon.

陽子照射けい素中の水素に関係する深い準位
Author (3)：
IRMSCHER K

About IRMSCHER K

(Humboldt-Univ. Berlin, DDR)

About Humboldt-Univ. Berlin, DDR

, 
KLOSE H

About KLOSE H

(Humboldt-Univ. Berlin, DDR)

About Humboldt-Univ. Berlin, DDR

, 
MAASS K

About MAASS K

(Humboldt-Univ. Berlin, DDR)

About Humboldt-Univ. Berlin, DDR


Material：
Journal of Physics. C. Solid State Physics  (J Phys C)

About Journal of Physics. C. Solid State Physics


Volume： 17  Issue： 35  Page： 6317-6329  Publication year： Dec. 20, 1984 
JST Material Number： B0914A  ISSN： 0022-3719  CODEN： JPSOAW  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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proton irradiation

About proton irradiation

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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DLTS

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   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=85A0109229&from=J-GLOBAL&jstjournalNo=B0914A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
陽子照射

About 陽子照射

, 
けい素

About けい素

, 
水素

About 水素

, 
深い準位

About 深い準位


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