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ArticleJ-GLOBAL ID:200902000015869080整理番号:81A0300849

Planar InP avalanche photodiode with Zn-diffused guard ring.

Zn拡散ガードリングを有するプレーナInPアバランシェフォトダイオード

著者:ANDO H(Musashino Electrical Communication Lab., Tokyo)、SUSA N(Musashino Electrical Communication Lab., Tokyo)、KANBE H(Musashino Electrical Communication Lab., Tokyo)
資料名:Electron Lett 巻:17 号:8 ページ:292-294
発行年:1981年04月16日
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About J-GLOBAL

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