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ArticleJ-GLOBAL ID:200902000016580807整理番号:85A0301178

Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy.

有機金属気相エピタクシー法によるひ化ガリウムの選択領域成長

著者:GHOSH C(ITT Corp., Virginia)、LAYMAN R L(ITT Corp., Virginia)
資料名:Appl Phys Lett 巻:45 号:11 ページ:1229-1231
発行年:1984年12月01日
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