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ArticleJ-GLOBAL ID:200902000022893493整理番号:93A0180301

Selective Growth of Cubic SiC on Si by Chemical Vapor Deposition.

著者:NISHINO S(Kyoto Inst. Technology, Kyoto, JPN)、TAKAHASHI K(Kyoto Inst. Technology, Kyoto, JPN)、ISHIDA H(Kyoto Inst. Technology, Kyoto, JPN)・・・
資料名:Amorph Cryst Silicon Carbide 3 Other Group 4-4 Mater ページ:295-300
発行年:1992年
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