Art
J-GLOBAL ID：200902000030068868   Reference number：81A0164136

A comparison of Pd Schottky contacts on InP, GaAs and Si.

InP,GaAsとSiとのPd Schottky接触の比較
Author (2)：
HOEKELEK E

About HOEKELEK E

(Univ. Minnesota)

About Univ. Minnesota

, 
ROBINSON G Y

About ROBINSON G Y

(Univ. Minnesota)

About Univ. Minnesota


Material：
Solid-State Electronics  (Solid-State Electron)

About Solid-State Electronics


Volume： 24  Issue： 2  Page： 99-103  Publication year： Feb. 1981 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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Schottky barrier

About Schottky barrier

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
半導体-金属接触【’81~’92】 
(BM03073E)

About 半導体-金属接触【’81~’92】

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
InP

About InP

, 
GaAs

About GaAs

, 
Si

About Si

, 
Pd

About Pd

, 
Schottky接触

About Schottky接触


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