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ArticleJ-GLOBAL ID:200902000035093070整理番号:92A0654300

Influence of the conditions during ion implantation on the formation of defects in silicon.

Si中の欠陥形成に及ぼすイオン注入条件の影響

著者:ZHUKOVSKII P V(V.I. Lenin Belorussian State Univ., Minsk)
資料名:Sov Phys Semicond 巻:26 号:1 ページ:84-88
発行年:1992年01月
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