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ArticleJ-GLOBAL ID:200902000039937907整理番号:91A0180520

Hydrogen-radical annealing of chemical vapor-deposited amorphous silicon films.

化学気相堆積した非晶質シリコン膜の水素ラジカルアニール

著者:UCHIDA Y(Nishi‐Tokyo Univ., Yamanashi)、KANOH H(Tokyo Inst. Technology, Tokyo)、SUGIURA O(Tokyo Inst. Technology, Tokyo)・・・
資料名:Jpn J Appl Phys Part 2 巻:29 号:12 ページ:L2171-L2173
発行年:1990年12月
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