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ArticleJ-GLOBAL ID:200902000046940280整理番号:87A0114486

ドレーン効率最大法によるMOS‐FET式高周波広帯域電力増幅器の一般的設計理論

Generalized drain-efficiency maximizing theory for designing MOS-FET RE wide-band power amplifiers.

著者:池田弘明(NHK)、生岩量久(NHK)
資料名:電気学会論文誌 C 巻:106 号:11 ページ:225-232
発行年:1986年11月
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