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ArticleJ-GLOBAL ID:200902000054993759整理番号:92A0409855

Excitation-power dependence of the near-band-edge photoluminescence of semiconductors.

半導体におけるバンド端近傍の光ルミネセンスの励起強度依存性

著者:SCHMIDT T(Univ. Linz, Linz, AUT)、LISCHKA K(Univ. Linz, Linz, AUT)、ZULEHNER W(Univ. Linz, Linz, AUT)
資料名:Phys Rev B Condens Matter Mater Phys 巻:45 号:16 ページ:8989-8994
発行年:1992年04月15日
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