High-efficiency 1-, 2-, and 4-W class-B FET power amplifiers.

LANE J R; FREITAG R G; HAHN H‐K; DEGENFORD J E; COHN M

J-GLOBAL ID：200902000056338499整理番号：87A0171036

High-efficiency 1-, 2-, and 4-W class-B FET power amplifiers.

高効率の1‐W,2‐W,4‐W B級FET電力増幅器

著者：LANE J R(Westinghouse Electric Corp., MD, USA)、FREITAG R G(Westinghouse Electric Corp., MD, USA)、HAHN H‐K(Westinghouse Electric Corp., MD, USA)・・・
資料名：IEEE Trans Microw Theory Tech 巻：34 号：12 ページ：1318-1326
発行年：1986年12月

J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
It’s useful for making new discoveries and uncovering new information.

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.

Material (-) / JST material number (-)
Volume, issue, and page numbers:
Publication year
ISSN/ISBN/CODEN
Category name for material content
Article type
Country of issue/Language

High-efficiency 1-, 2-, and 4-W class-B FET power amplifiers.

Article with content similar to the Article

Researcher performing research similar to the Article

Patents with content similar to the Article

Research Project similar to the Article

Article information available in J-GLOBAL

Citation of the Article (-)
Cited Article (-)
Research Project citing the paper (-)

Thesaurus terms (-)
Semi Thesaurus terms (-)