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ArticleJ-GLOBAL ID:200902000058403751整理番号:87A0315329

Strain-induced surface reconstruction in the epitaxial Si-Ge(111) system.

エピタキシャルSi‐Ge(111)系における歪み誘起表面再構成

著者:NAKAGAWA K(FOM‐Inst. Atomic and Molecular Physics, Amsterdam, NLD)、MAR<span style=text-decoration:overline>E ́</span>E P M J(FOM‐Inst. Atomic and Molecular Physics, Amsterdam, NLD)、VAN DER VEEN J F(FOM‐Inst. Atomic and Molecular Physics, Amsterdam, NLD)
資料名:18th Int Conf Phys Semicond 1986 Vol 1 ページ:93-96
発行年:1986年
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