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ArticleJ-GLOBAL ID:200902000059153465整理番号:92A0840600

ステップドープ埋め込みゲート構造GaAs MESFETのチャネル構造とゲート耐圧の関係

On the Gate-Drain Breakdown in the Double-Recessed Structure GaAs MESFET with a Slightly Doped Surface Layer.

著者:岡本康宏(日本電気)、岩田直高(日本電気)、高橋英匡(日本電気)・・・
資料名:応用物理学会学術講演会講演予稿集 巻:53rd 号:3 ページ:1140
発行年:1992年09月
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