Atomic layer epitaxy of device quality GaAs with a 0.6μm/h growth rate.

COLTER P C; HUSSIEN S A; DIP A; ERDOGAN M U; DUNCAN W M; BEDAIR S M

Art

J-GLOBAL ID：200902000059915560 Reference number：91A0825260

Atomic layer epitaxy of device quality GaAs with a 0.6μm/h growth rate.

0.6μm/hの成長速度によるデバイス品質のGaAsの原子層エピタクシー

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Author (6)： , , , , ,
Material：
Volume： 59 Issue： 12 Page： 1440-1442 Publication year： Sep. 16, 1991
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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