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ArticleJ-GLOBAL ID:200902000071302140整理番号:83A0008418

Hot electrons in MOS transistors: Lateral distribution of the trapped oxide charge.

MOSトランジスタにおける熱い電子 トラップされた酸化物電荷の横方向分布

著者:LOMBARDI C(SGS-ATES, Italy)、OLIVO P(Univ. Bologna, Italy)、RICCO B(Univ. Padova, Italy)・・・
資料名:IEEE Electron Device Lett 巻:3 号:7 ページ:215-217
発行年:1982年07月
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