Art

J-GLOBAL ID：200902000082047141   Reference number：92A0474913

Temperature dependence of damage formations in silicon carbide irradiated with helium ions.

Author (4)： KASAHARA S (Hitachi Ltd., Ibaraki, JPN) ,  KATANO Y (Japan Atomic Energy Research Inst., Ibaraki, JPN) ,  NAKATA K (Hitachi Ltd., Ibaraki, JPN) ,  OHNO H (Japan Atomic Energy Research Inst., Ibaraki, JPN)
Material： Proceedings. International Conference on Evolution in Beam Applications, 1991  (Proc Int Conf Evol Beam Appl 1991)
Page： 89-94  Publication year： 1992 
JST Material Number： K19920148  Document type： Proceedings
Country of issue： Japan (JPN)  Language： ENGLISH (EN)