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ArticleJ-GLOBAL ID:200902000083544190整理番号:90A0919906

大面積イオンドーピング装置を用いたLCD用a‐Si:H TFTアレイの作製 I

Fabrication of a-Si:H thin film transistors for LCD switching devices using a large area ion doping system.

著者:吉田哲久(松下電器産業)、北川雅俊(松下電器産業)、糠山正明(日新電機)・・・
資料名:応用物理学会学術講演会講演予稿集 巻:51st 号:2 ページ:749
発行年:1990年09月
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