Art
J-GLOBAL ID:200902000086311480
Reference number:90A0588345
The effects of fluorine atoms in high-dose arsenic or phosphorus ion implanted silicon.
高ドーズのひ素またはりんイオン注入シリコンにおけるふっ素原子の影響
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Author (1):
Material:
Volume:
137
Issue:
6
Page:
1918-1924
Publication year:
Jun. 1990
JST Material Number:
C0285A
ISSN:
1945-7111
CODEN:
JESOAN
Document type:
Article
Article type:
原著論文
Country of issue:
United States (USA)
Language:
ENGLISH (EN)
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JST classification (1):
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices
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