Art
J-GLOBAL ID:200902000094981729   Reference number:84A0077180

Crystal growth and neutral-acceptor bound-exciton emission of ZnCdTe by THM with Te solvent.

Teを溶媒としたTHM(移動ヒータ法)によるZnCdTeの結晶成長と中性-アクセプタ-束縛-励起子放射
Author (1):
Material:
Volume: 77  Issue:Page: K115-K119  Publication year: Jun. 1983 
JST Material Number: D0774A  ISSN: 0031-8965  Document type: Article
Article type: 短報  Country of issue: Germany, Federal Republic of (DEU)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=84A0077180&from=J-GLOBAL&jstjournalNo=D0774A") }}
JST classification (3):
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors  ,  Luminescence of semiconductors  ,  Excitons 

Return to Previous Page