Art
J-GLOBAL ID:200902000099030323   Reference number:88A0000896

The properties of amorphous silicon doped with isovalent impurities.

等原子価不純物をドープしたアモルファス・シリコンの性質
Author (5):
Material:
Volume: 142  Issue:Page: K125-K129  Publication year: Aug. 1987 
JST Material Number: C0599A  ISSN: 0370-1972  Document type: Article
Article type: 短報  Country of issue: Germany, Federal Republic of (DEU)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=88A0000896&from=J-GLOBAL&jstjournalNo=C0599A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Electronic structure of amorphous materials in general 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page