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ArticleJ-GLOBAL ID:200902000105068273整理番号:92A0789478

高速回転シリコンエピ装置によるシランガスを用いたシリコン成長

Silicon growth by high-speed rotation silicon epitaxial equipment using silane gas.

著者:佐藤裕輔(東芝 総研)、田村珠美(東芝 重電技研)、大嶺俊光(東芝 総研)
資料名:化学工学会秋季大会研究発表講演要旨集 巻:25th 号:Pt 2 ページ:10
発行年:1992年08月
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