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ArticleJ-GLOBAL ID:200902000108987091整理番号:91A0134698

電子ビーム照射を用いたAl2O3基板上へのSiガスソースエピタキシャル選択成長

Si selective epitaxial growth on Al2O3 substrate using electron beam irradiation.

著者:沢田和明(豊橋技科大)、石田誠(豊橋技科大)、中村哲郎(豊橋技科大)
資料名:電子情報通信学会技術研究報告 巻:90 号:349(SDM90 159-175) ページ:75-80
発行年:1990年12月14日
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