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J-GLOBAL ID：200902000108987091
Reference number：91A0134698
Si selective epitaxial growth on Al2O3 substrate using electron beam irradiation.
電子ビーム照射を用いたAl2O3基板上へのSiガスソースエピタキシャル選択成長
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Author (3)：
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Material：
Volume：
90
Issue：
349(SDM90 159-175)
Page：
75-80
Publication year：
Dec. 14, 1990
JST Material Number：
S0532B
ISSN：
0913-5685
Document type：
Proceedings
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
, Manufacturing technology of solid-state devices
Terms in the title (4)：
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,
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