Carrier density distribution in modulation doped GaAs-Al<sub>x</sub>Ga<sub>1-x</sub>As quantum well heterostructures.

HSIEH T C; HESS K; COLEMAN J J; DAPKUS P D

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J-GLOBAL ID：200902000114967256 Reference number：84A0194121

Carrier density distribution in modulation doped GaAs-Al_xGa_1-xAs quantum well heterostructures.

変調ドープされたGaAs-Al_xGa_1-xAs量子井戸ヘテロ構造におけるキャリア密度分布

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Material：
Volume： 26 Issue： 12 Page： 1173-1176 Publication year： Dec. 1983
JST Material Number： H0225A ISSN： 0038-1101 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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Carrier density distribution in modulation doped GaAs-AlxGa1-xAs quantum well heterostructures.

Carrier density distribution in modulation doped GaAs-Al_xGa_1-xAs quantum well heterostructures.