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ArticleJ-GLOBAL ID:200902000115735928整理番号:90A0877078

Design of a high-density multiple-valued content-addressable memory based on floating-gate MOS devices.

フローティングゲートMOS素子に基づいた高密度多値内容番地付け可能メモリの設計

著者:HANYU T(Tohoku Univ., Sendai, JPN)、HIGUCHI T(Tohoku Univ., Sendai, JPN)
資料名:Proc IEEE Int Symp Multiple-Valued Logic 巻:20th ページ:18-23
発行年:1990年
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