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ArticleJ-GLOBAL ID:200902000115999577整理番号:89A0477091

Electrical characteristics of metal-insulator-semiconductor diodes with ZrO2/SiO2 dielectric films.

ZrO2/SiO2誘電体薄膜を使った金属‐絶縁物‐半導体ダイオードの電気特性

著者:FUKUMOTO H(Hiroshima Univ., Higashihiroshima, JPN)、MORITA M(Hiroshima Univ., Higashihiroshima, JPN)、OSAKA Y(Hiroshima Univ., Higashihiroshima, JPN)
資料名:J Appl Phys 巻:65 号:12 ページ:5210-5212
発行年:1989年06月15日
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