Art
J-GLOBAL ID：200902000118565977   Reference number：90A0409360

Horizontal silicon epitaxial deposition revisited.

水平シリコンのエピタキシアル蒸着の再結晶
Author (2)：
MAHAJAN R L

About MAHAJAN R L

(AT&T Bell Lab., New Jersey)

About AT&T Bell Lab., New Jersey

, 
WEI C

About WEI C

(AT&T Bell Lab., New Jersey)

About AT&T Bell Lab., New Jersey


Material：
ASME. HTD (American Society of Mechanical Engineers. Heat Transfer Div.)  (ASME HTD (Am Soc Mech Eng Heat Transf Div))

About ASME. HTD (American Society of Mechanical Engineers. Heat Transfer Div.)


Volume： 123  Page： 237-242  Publication year： 1989 
JST Material Number： D0778B  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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epitaxy

About epitaxy

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
エピタキシアル

About エピタキシアル

, 
蒸着

About 蒸着

, 
再結晶

About 再結晶


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