Art
J-GLOBAL ID：200902000124251844
Reference number：90A0902104
An improved understanding for the transient operation of the power insulated gate bipolar transistor(IGBT).
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Author (1)：
Material：
Volume：
5
Issue：
4
Page：
459-468
Publication year：
Oct. 1990
JST Material Number：
D0211B
ISSN：
0885-8993
CODEN：
ITPEE8
Document type：
Article
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
Terms in the title (1)：
Terms in the title
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