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ArticleJ-GLOBAL ID:200902000127384489整理番号:90A0044605

Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110) surfaces at room temperature.

(100)面と(110)面上へのCoSi2とNiSi2の室温ホモエピタキシャル成長

著者:TUNG R T(AT&T Bell Lab., New Jersey)、SCHREY F(AT&T Bell Lab., New Jersey)、YALISOVE S M(AT&T Bell Lab., New Jersey)
資料名:Appl Phys Lett 巻:55 号:19 ページ:2005-2007
発行年:1989年11月06日
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