Art
J-GLOBAL ID:200902000182950868   Reference number:87A0294086

Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields.

交差する電場と磁場が存在するときの三元黄銅鉱型半導体の超薄膜における有効電子質量の理論的解析
Author (3):
Material:
Volume: 66  Issue: 3/4  Page: 131-143  Publication year: Feb. 1987 
JST Material Number: E0115C  ISSN: 0022-2291  CODEN: JLTPAC  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=87A0294086&from=J-GLOBAL&jstjournalNo=E0115C") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Electronic structure of crystalline semiconductors 

Return to Previous Page