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ArticleJ-GLOBAL ID:200902000182950868整理番号:87A0294086

Theoretical analysis of the effective electron mass in ultrathin films of ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields.

交差する電場と磁場が存在するときの三元黄銅鉱型半導体の超薄膜における有効電子質量の理論的解析

著者:MONDAL M(Univ. Calcutta, IND)、CHATTOPADHYAY N(Univ. Calcutta, IND)、GHATAK K P(Univ. Calcutta, IND)
資料名:J Low Temp Phys 巻:66 号:3/4 ページ:131-143
発行年:1987年02月
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