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ArticleJ-GLOBAL ID:200902001837673087整理番号:93A0049684

Generation Mechanism of Tensile Stress in a-Si1-xNx:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique.

アフタグロープラズマ化学蒸着法で作製したa‐Si1-xNx:H膜における引張応力の発生機構

著者:NAGAYOSHI H(Tokyo Univ. Agriculture and Technology, Tokyo)、HOE W C(Tokyo Univ. Agriculture and Technology, Tokyo)、UENO T(Tokyo Univ. Agriculture and Technology, Tokyo)・・・
資料名:Japanese Journal of Applied Physics. Part 2. Letters 巻:31 号:11B ページ:L1628-1631
発行年:1992年11月15日
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