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ArticleJ-GLOBAL ID:200902001838966690整理番号:83A0119607

MOSFET's on Au-diffused high-resistivity Si substrates.

金拡散した高抵抗Si基板上のMOSFET

著者:NISHIOKA T(Musashino Electrical and Communication Lab., Tokyo)、KOBAYASHI T(Osaka Univ.)、FURUKAWA Y(Musashino Electrical and Communication Lab., Tokyo)
資料名:IEEE Trans Electron Devices 巻:29 号:10 ページ:1507-1510
発行年:1982年10月
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