Art
J-GLOBAL ID：200902001838966690   Reference number：83A0119607

MOSFET’s on Au-diffused high-resistivity Si substrates.

金拡散した高抵抗Si基板上のMOSFET
Author (3)：
NISHIOKA T

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(Musashino Electrical and Communication Lab., Tokyo)

About Musashino Electrical and Communication Lab., Tokyo

, 
KOBAYASHI T

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(Osaka Univ.)

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, 
FURUKAWA Y

About FURUKAWA Y

(Musashino Electrical and Communication Lab., Tokyo)

About Musashino Electrical and Communication Lab., Tokyo


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 29  Issue： 10  Page： 1507-1510  Publication year： Oct. 1982 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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MOSFET

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,...
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JST classification (1)：
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Transistors 
(NC03070N)

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Terms in the title (4)：
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金

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, 
拡散

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, 
Si基板

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, 
MOSFET

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