Art
J-GLOBAL ID：200902001838993700   Reference number：84A0287351

Thermally stimulated current measurements on irradiated MOS capacitors.

照射されたMOSキャパシタの熱刺激電流測定
Author (1)：
SHANFIELD Z

About SHANFIELD Z

(Northrop, CA)

About Northrop, CA


Material：
IEEE Transactions on Nuclear Science  (IEEE Trans Nucl Sci)

About IEEE Transactions on Nuclear Science


Volume： 30  Issue： 6  Page： 4064-4070  Publication year： Dec. 1983 
JST Material Number： C0235A  ISSN： 0018-9499  CODEN： IETNAE  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
MOS structure

About MOS structure

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=84A0287351&from=J-GLOBAL&jstjournalNo=C0235A") }}
JST classification (2)：
JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】 
(BM03074V)

About 金属-絶縁体-半導体構造【’81~’92】

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
MOSキャパシタ

About MOSキャパシタ

, 
熱刺激電流

About 熱刺激電流


Return to Previous Page

TOP

BOTTOM