Art
J-GLOBAL ID：200902001849038662
Reference number：91A0196178
A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film.
フォトCVD成長の窒化りん薄膜を用いた新しいInP Schottkyダイオード
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Author (3)：
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Material：
Page：
344-347
Publication year：
1990
JST Material Number：
K19910039
Document type：
Proceedings
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
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Diodes
Terms in the title (8)：
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