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ArticleJ-GLOBAL ID:200902001849038662整理番号:91A0196178

A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film.

フォトCVD成長の窒化りん薄膜を用いた新しいInP Schottkyダイオード

著者:JEONG Y H(Pohang Inst. Science and Technology, Pohang, KOR)、KIM G T(Pohang Inst. Science and Technology, Pohang, KOR)、KIM S T(Pohang Inst. Science and Technology, Pohang, KOR)
資料名:Proc 2nd Int Conf Indium Phosphide Relat Mater 1990 ページ:344-347
発行年:1990年
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