Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells.

IYENGAR G U; KUHN K J; YEE S

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J-GLOBAL ID：200902001850583631 Reference number：92A0332154

Free carrier induced changes in the absorption and refractive index for intersubband optical transitions in Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs quantum wells.

Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs量子井戸中のサブバンド間光学遷移における自由キャリアによって誘起される吸収率および屈折率の変化

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Issue： 120 Page： 431-436 Publication year： 1992
JST Material Number： E0403B ISSN： 0305-2346 CODEN： IPHSAC Document type： Proceedings
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】 , Electronic structure of crystalline semiconductors

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