About J-GLOBAL

日本語

Font size
  • A
  • A

Articleの詳細情報

ArticleJ-GLOBAL ID:200902001852770803整理番号:90A0577131

Method for estimating the generation region for band-to-band tunnel leakage current of submicron MOS transistors.

サブミクロンMOSトランジスタのバンド対バンドトンネル漏洩電流の発生領域の推定法

著者:ASAKURA F(NEC Corp. Tokyo)、MATSUMOTO H(NEC Corp., Kawasaki, JPN)、KIKKAWA T(NEC Corp. Tokyo)
資料名:NEC Res Dev 号:97 ページ:13-17
発行年:1990年04月
  • J-GLOBAL home
  • Bookmark J-GLOBAL

J-GLOBAL: Linking, Expanding and Sparking

About J-GLOBAL

Linking

J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
It’s useful for making new discoveries and uncovering new information.

Expanding

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

Sparking

Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.