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ArticleJ-GLOBAL ID:200902001862515550整理番号:87A0025186

Effect of group V/III flux ratio on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy.

分子ビームエピタキシーで成長させたAlxGa1-xAs(x=0.7)中の深い電子捕獲中心に対するV/III族フラックス比の効果

著者:HAYAKAWA T(Sharp Corp., Tenri, JPN)、KONDO M(Sharp Corp., Tenri, JPN)、SUYAMA T(Sharp Corp., Tenri, JPN)・・・
資料名:Appl Phys Lett 巻:49 号:13 ページ:788-790
発行年:1986年09月29日
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