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ArticleJ-GLOBAL ID:200902001866249979整理番号:86A0206196

Displacement damage and dose enhancement in gallium arsenide and silicon.

ひ化ガリウム及びシリコンにおける置換損傷及び線量増化

著者:GARTH J C(Rome Air Development Center, MA)、BURKE E A(Rome Air Development Center, MA)、WOOLF S(Arcon Corp., MA)
資料名:IEEE Trans Nucl Sci 巻:32 号:6 ページ:4382-4387
発行年:1985年12月
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About J-GLOBAL

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J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
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Expanding

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

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Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.