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J-GLOBAL ID:200902001866249979   Reference number:86A0206196

Displacement damage and dose enhancement in gallium arsenide and silicon.

ひ化ガリウム及びシリコンにおける置換損傷及び線量増化
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Material:
Volume: 32  Issue:Page: 4382-4387  Publication year: Dec. 1985 
JST Material Number: C0235A  ISSN: 0018-9499  CODEN: IETNAE  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Radiation physics in general  ,  Semiconductor integrated circuit 
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