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J-GLOBAL ID:200902001868113683   Reference number:91A0684834

Defect formation in the cooling process after CZ-Si growth.

Si結晶の熱処理過程と欠陥の形成
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Volume: 60  Issue:Page: 766-773  Publication year: Aug. 1991 
JST Material Number: F0252A  ISSN: 0369-8009  CODEN: OYBSA  Document type: Article
Article type: 文献レビュー  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Lattice defects in semiconductors  ,  Materials of solid-state devices 
Reference (26):
  • 1) 阿部孝夫:応用物理59, 272 (1990).
  • 2) S. Kishino, Y. Matsushita and M. Kanamori: Appl. Phys. Lett. 35, 213 (1979).
  • 3) M. Imai and Y. Yatsurugi: Proc. Int. Conf. Defect Control in Semiconductors, Yokohama, 1989, p163 (North-Holland, Amsterdam, 1990).
  • 4) E. Kuroda, H. Kozuka and Y. Takano: J. Cryst. Growth 68, 613 (1984).
  • 5) T. Y. Tan, E. E. Gardener and W. K. Tice: Appl. Phys. Lett. 30, 175 (1977).
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