Comparison of As species (As4 and As2) in molecular beam epitaxial growth of AlxGa1-xAs (x=0.2-0.7) on (100) GaAs.

HAYAKAWA T; MORISHIMA M; NAGAI M; HORIE H; MATSUMOTO K

J-GLOBAL ID：200902001883966986整理番号：92A0000482

Comparison of As species (As4 and As2) in molecular beam epitaxial growth of AlxGa1-xAs (x=0.2-0.7) on (100) GaAs.

(100)GaAs上のAl_xGa_1-xAs(x=0.2‐0.7)分子線エピタキシャル成長におけるAs種(As₄およびAs₂)の比較

著者：HAYAKAWA T(Eastman Kodak (Japan) Ltd., Yokohama, JPN)、MORISHIMA M(Eastman Kodak (Japan) Ltd., Yokohama, JPN)、NAGAI M(Eastman Kodak (Japan) Ltd., Yokohama, JPN)・・・
資料名：Appl Phys Lett 巻：59 号：19 ページ：2415-2417
発行年：1991年11月04日

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Comparison of As species (As4 and As2) in molecular beam epitaxial growth of AlxGa1-xAs (x=0.2-0.7) on (100) GaAs.

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