Art
J-GLOBAL ID:200902001884771321   Reference number:90A0149893

Electrical activity associated with dislocations in silicon.

シリコン中の転位に関係した電気的活性
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Material:
Issue: 104  Page: 169-174  Publication year: 1989 
JST Material Number: E0403B  ISSN: 0305-2346  CODEN: IPHSAC  Document type: Proceedings
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Photoconduction,photoelectromotive force  ,  Lattice defects in semiconductors 
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