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ArticleJ-GLOBAL ID:200902001890144177整理番号:90A0587641

Electronic properties of the donor states under two-dimensional-conductor and quantum-wire configurations in heavily and orderly doped (GaAs)-(AlAs).

多量の不純物を秩序的に添加した(GaAs)‐(AlAs)における二次元伝導体および量子細線でのドナー状態の電子的特性

著者:FONG C Y(Univ. California, California)、YANG L H(Univ. California, California)、NELSON J S(Sandia National Lab., New Mexico)・・・
資料名:Physical Review. B. Condensed Matter and Materials Physics 巻:41 号:15 ページ:10667-10673
発行年:1990年05月15日
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