Art
J-GLOBAL ID：200902001892209756   Reference number：89A0339233

Epitaxial growth and characterization of Si/NiSi2/Si(111) heterostructures.

Si/NiSi2/Si(111)ヘテロ構造のエピタキシャル成長と評価
Author (4)：
RIZZI A

About RIZZI A

, 
FOERSTER A

About FOERSTER A

, 
LUETH H

About LUETH H

, 
SLIJKERMAN W

About SLIJKERMAN W

(FOM-Inst. Atomic and Molecular Physics, Amsterdam, NLD)

About FOM-Inst. Atomic and Molecular Physics, Amsterdam, NLD


Material：
Surface Science  (Surface Science Letters)

About Surface Science


Volume： 211/212  Page： 620-629  Publication year： Apr. 1989 
JST Material Number： C0129B  ISSN： 0039-6028  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
heterojunction

About heterojunction

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
NiSi2

About NiSi2

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

,  半導体-半導体接触【’81~’92】 
(BM03072N)

About 半導体-半導体接触【’81~’92】

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
Si

About Si

, 
ヘテロ構造

About ヘテロ構造

, 
エピタキシャル成長

About エピタキシャル成長

, 
評価

About 評価


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