Art
J-GLOBAL ID：200902001895626129
Reference number：90A0499285
Simulation moleculaire d’oxydation de InP et de depot de SiO2 sur InP.
InPの酸化及びInP上へのSiO2蒸着の分子シミュレーション
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Author (3)：
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,
Material：
Volume：
45
Issue：
251
Page：
57-58
Publication year：
Mar. 1990
JST Material Number：
E0358A
ISSN：
0223-4335
CODEN：
VCMIDS
Document type：
Article
Article type：
短報
Country of issue：
France (FRA)
Language：
FRENCH (FR)
Thesaurus term：
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All keywords is available on JDreamIII(charged).
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors
, Oxide thin films
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
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