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ArticleJ-GLOBAL ID:200902001897021984整理番号:82A0223823

Preparation of TaC single crystals by a floating zone technique.

浮遊帯域法によるTaC単結晶の育成

著者:OTANI S(National Inst. Research in Inorganic Materials, Ibaraki)、TANAKA T(National Inst. Research in Inorganic Materials, Ibaraki)、ISHIZAWA Y(National Inst. Research in Inorganic Materials, Ibaraki)
資料名:J Cryst Growth 巻:55 号:3 ページ:431-437
発行年:1981年12月
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